Minimization of the contact resistance between InAs nanowires and metallic contacts.
Identifieur interne : 000541 ( Main/Exploration ); précédent : 000540; suivant : 000542Minimization of the contact resistance between InAs nanowires and metallic contacts.
Auteurs : RBID : pubmed:23299854English descriptors
- KwdEn :
- MESH :
- chemical , chemistry : Arsenicals, Indium.
- chemical , radiation effects : Arsenicals, Indium.
- chemistry : Metal Nanoparticles.
- radiation effects : Metal Nanoparticles, Surface Properties.
- Electric Conductivity, Electrodes, Heavy Ions, Materials Testing.
Abstract
We investigate different processes for optimizing the formation of Ohmic contacts to InAs nanowires. The nanowires are grown via molecular beam epitaxy without the use of metal catalysts. Metallic contacts are attached to the nanowires by using an electron beam lithography process. Before deposition of the contacts, the InAs nanowires are treated either by wet etching in an ammonium polysulfide (NH(4))(2)S(x) solution or by an argon milling process in order to remove a surface oxide layer. Two-point electrical measurements show that the resistance of the ammonium polysulfide-treated nanowires is two orders of magnitude lower than that of the untreated nanowires. The nanowires that are treated by the argon milling process show a resistance which is more than an order of magnitude lower than that of those treated with ammonium polysulfide. Four-point measurements allow us to extract an upper bound of 1.4 × 10(-7) Ω cm(2) for the contact resistivity of metallic contacts on nanowires treated by the argon milling process.
DOI: 10.1088/0957-4484/24/4/045703
PubMed: 23299854
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The nanowires are grown via molecular beam epitaxy without the use of metal catalysts. Metallic contacts are attached to the nanowires by using an electron beam lithography process. Before deposition of the contacts, the InAs nanowires are treated either by wet etching in an ammonium polysulfide (NH(4))(2)S(x) solution or by an argon milling process in order to remove a surface oxide layer. Two-point electrical measurements show that the resistance of the ammonium polysulfide-treated nanowires is two orders of magnitude lower than that of the untreated nanowires. The nanowires that are treated by the argon milling process show a resistance which is more than an order of magnitude lower than that of those treated with ammonium polysulfide. Four-point measurements allow us to extract an upper bound of 1.4 × 10(-7) Ω cm(2) for the contact resistivity of metallic contacts on nanowires treated by the argon milling process.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="MEDLINE"><PMID Version="1">23299854</PMID><DateCreated><Year>2013</Year><Month>01</Month><Day>10</Day></DateCreated><DateCompleted><Year>2013</Year><Month>06</Month><Day>10</Day></DateCompleted><DateRevised><Year>2013</Year><Month>11</Month><Day>21</Day></DateRevised><Article PubModel="Print-Electronic"><Journal><ISSN IssnType="Electronic">1361-6528</ISSN><JournalIssue CitedMedium="Internet"><Volume>24</Volume><Issue>4</Issue><PubDate><Year>2013</Year><Month>Feb</Month><Day>1</Day></PubDate></JournalIssue><Title>Nanotechnology</Title><ISOAbbreviation>Nanotechnology</ISOAbbreviation></Journal><ArticleTitle>Minimization of the contact resistance between InAs nanowires and metallic contacts.</ArticleTitle><Pagination><MedlinePgn>045703</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1088/0957-4484/24/4/045703</ELocationID><Abstract><AbstractText>We investigate different processes for optimizing the formation of Ohmic contacts to InAs nanowires. The nanowires are grown via molecular beam epitaxy without the use of metal catalysts. Metallic contacts are attached to the nanowires by using an electron beam lithography process. Before deposition of the contacts, the InAs nanowires are treated either by wet etching in an ammonium polysulfide (NH(4))(2)S(x) solution or by an argon milling process in order to remove a surface oxide layer. Two-point electrical measurements show that the resistance of the ammonium polysulfide-treated nanowires is two orders of magnitude lower than that of the untreated nanowires. The nanowires that are treated by the argon milling process show a resistance which is more than an order of magnitude lower than that of those treated with ammonium polysulfide. Four-point measurements allow us to extract an upper bound of 1.4 × 10(-7) Ω cm(2) for the contact resistivity of metallic contacts on nanowires treated by the argon milling process.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Sourribes</LastName><ForeName>M J L</ForeName><Initials>MJ</Initials><Affiliation>London Centre for Nanotechnology, University College London, Gower Street, London WC1H 0AH, UK. m.sourribes@ucl.ac.uk</Affiliation></Author><Author ValidYN="Y"><LastName>Isakov</LastName><ForeName>I</ForeName><Initials>I</Initials></Author><Author ValidYN="Y"><LastName>Panfilova</LastName><ForeName>M</ForeName><Initials>M</Initials></Author><Author ValidYN="Y"><LastName>Warburton</LastName><ForeName>P A</ForeName><Initials>PA</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType><PublicationType>Research Support, Non-U.S. Gov't</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2013</Year><Month>01</Month><Day>08</Day></ArticleDate></Article><MedlineJournalInfo><Country>England</Country><MedlineTA>Nanotechnology</MedlineTA><NlmUniqueID>101241272</NlmUniqueID><ISSNLinking>0957-4484</ISSNLinking></MedlineJournalInfo><ChemicalList><Chemical><RegistryNumber>0</RegistryNumber><NameOfSubstance>Arsenicals</NameOfSubstance></Chemical><Chemical><RegistryNumber>045A6V3VFX</RegistryNumber><NameOfSubstance>Indium</NameOfSubstance></Chemical><Chemical><RegistryNumber>1303-11-3</RegistryNumber><NameOfSubstance>indium arsenide</NameOfSubstance></Chemical></ChemicalList><CitationSubset>IM</CitationSubset><MeshHeadingList><MeshHeading><DescriptorName MajorTopicYN="N">Arsenicals</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName><QualifierName MajorTopicYN="N">radiation effects</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Electric Conductivity</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="Y">Electrodes</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Heavy Ions</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Indium</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName><QualifierName MajorTopicYN="N">radiation effects</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Materials Testing</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Metal Nanoparticles</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName><QualifierName MajorTopicYN="N">radiation effects</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Surface Properties</DescriptorName><QualifierName MajorTopicYN="N">radiation effects</QualifierName></MeshHeading></MeshHeadingList></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="aheadofprint"><Year>2013</Year><Month>1</Month><Day>08</Day></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2013</Year><Month>1</Month><Day>10</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2013</Year><Month>1</Month><Day>10</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2013</Year><Month>6</Month><Day>12</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="doi">10.1088/0957-4484/24/4/045703</ArticleId><ArticleId IdType="pubmed">23299854</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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